MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18824 Products showing for MOSFETs

    onsemi
    N
    3 A
    60 V
    120 mΩ
    SOT-223
    -
    Surface Mount
    3
    -15 V, +15 V
    Enhancement
    2V
    -
    2.1 W
    -
    Single
    6.5mm
    +175 °C
    1
    Si
    7.6 nC @ 5 V
    3.5mm
    IXYS
    N
    64 A
    600 V
    95 mΩ
    TO-264
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    1.13 kW
    -
    Single
    19.96mm
    +150 °C
    1
    Si
    145 nC @ 10 V
    5.13mm
    Vishay
    N
    14 A
    500 V
    400 mΩ
    TO-247AC
    -
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    -
    2V
    190 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    64 nC @ 10 V
    5.31mm
    Infineon
    N
    44 A
    250 V
    46 mΩ
    TO-247AC
    HEXFET
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    3V
    310 W
    -
    Single
    15.9mm
    +175 °C
    1
    Si
    72 nC @ 10 V
    5.3mm
    Renesas Electronics
    P
    60 A
    60 V
    155 mΩ
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    2V
    -
    50 W
    -
    Single
    11.5mm
    +150 °C
    1
    Si
    -
    4.44mm
    onsemi
    N
    680 mA
    25 V
    450 mΩ
    SOT-23
    -
    Surface Mount
    3
    +8 V
    Enhancement
    -
    0.65V
    350 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    1.64 nC @ 4.5 V
    1.3mm
    STMicroelectronics
    N
    20 A
    600 V
    290 mΩ
    TO-220FP
    MDmesh
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    3V
    45 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    39 nC @ 10 V
    4.6mm
    Infineon
    N
    30 A
    55 V
    35 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -16 V, +16 V
    Enhancement
    2V
    1V
    68 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    25 nC @ 5 V
    4.69mm
    Microchip
    P
    -
    200 V
    -
    TO-92
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Vishay
    N
    14 A
    250 V
    280 mΩ
    D2PAK (TO-263)
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    3.1 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    68 nC @ 10 V
    9.65mm
    onsemi
    N
    120 A
    100 V
    3.5 mΩ
    D2PAK (TO-263)
    PowerTrench
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    333 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    89 nC @ 10 V
    9.65mm
    Infineon
    N
    180 A
    100 V
    5 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    370 W
    -
    Single
    10.66mm
    +175 °C
    1
    Si
    150 nC @ 10 V
    4.82mm
    onsemi
    N
    170 mA
    100 V
    6 Ω
    SOT-23
    PowerTrench
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    2V
    0.8V
    360 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    1.8 nC @ 10 V
    1.3mm
    Infineon
    N
    64 A
    55 V
    14 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    130 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    81 nC @ 10 V
    4.69mm
    Infineon
    N
    150 A
    30 V
    3 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    2.35V
    1.35V
    140 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    36 nC @ 4.5 V
    4.83mm
    IXYS
    N
    75 A
    100 V
    25 mΩ
    TO-220
    HiperFET, Polar
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5.5V
    -
    360 W
    -
    Single
    -
    +175 °C
    1
    Si
    74 nC @ 10 V
    -
    DiodesZetex
    N
    140 mA
    450 V
    50 Ω
    SOT-223
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    3V
    -
    2 W
    -
    Single
    6.7mm
    +150 °C
    1
    Si
    -
    3.7mm
    Infineon
    N
    14.1 A
    550 V
    380 mΩ
    TO-220
    CoolMOS™ CE
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    3.5V
    2.5V
    98 W
    -
    Single
    10.36mm
    +150 °C
    1
    Si
    24.8 nC @ 10 V
    4.57mm
    Toshiba
    N
    1 A
    7.5 V
    -
    SC-62
    -
    Surface Mount
    3
    +3 V
    Enhancement
    1.45V
    -
    3 W
    -
    Single
    4.6mm
    +150 °C
    1
    Si
    -
    2.5mm
    Infineon
    N
    75 A
    55 V
    4.7 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    330 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    150 nC @ 10 V
    4.83mm
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