Infineon BFP840FESDH6327XTSA1 Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP
- RS Stock No.:
- 170-2364
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
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$12.42
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$14.28
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | $0.621 | $12.42 |
| 760 - 1480 | $0.604 | $12.08 |
| 1500 + | $0.595 | $11.90 |
*price indicative
- RS Stock No.:
- 170-2364
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 85GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.4mm | |
| Series | BFP840FESD | |
| Width | 0.8mm | |
| Standards/Approvals | No | |
| Height | 0.55mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 85GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 1.4mm | ||
Series BFP840FESD | ||
Width 0.8mm | ||
Standards/Approvals No | ||
Height 0.55mm | ||
Automotive Standard No | ||
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.
Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
Related links
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