Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

RS Stock No.:: 823-5538P
Mfr. Part No.:: BFR193E6327HTSA1
Brand:: Infineon

Technical data sheets

Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

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Available for back order.

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$0.497

(exc. GST)

$0.572

(inc. GST)

Units	Per unit
25 +	$0.497

RS Stock No.:: 823-5538P
Mfr. Part No.:: BFR193E6327HTSA1
Brand:: Infineon

COO (Country of Origin):: CN

Attribute	Value
Transistor Type	NPN
Maximum DC Collector Current	80 mA
Maximum Collector Emitter Voltage	12 V
Package Type	SOT-23
Mounting Type	Surface Mount
Maximum Power Dissipation	580 mW
Transistor Configuration	Single
Maximum Collector Base Voltage	20 V
Maximum Emitter Base Voltage	2 V
Maximum Operating Frequency	8 GHz
Pin Count	3
Number of Elements per Chip	1
Minimum Operating Temperature	0 °C
Dimensions	2.9 x 1.3 x 1mm
Maximum Operating Temperature	+150 °C

Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Technical data sheets

RF Bipolar Transistors, Infineon