Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

This FRAM memory is designed for high-speed data storage solutions, featuring a memory size of 1 Mbit, organised as 128K x 8 bits. Using surface mount technology, it facilitates easy integration into various electronic systems. The compact dimensions measure 4.97mm x 3.98mm x 1.47mm, providing versatility for space-sensitive applications.

• Fast write operations with no delays enhance efficiency
• Supports up to 40MHz SPI interface for high-speed memory access
• AEC-Q100 compliant, ensuring reliable automotive memory solutions
• Advanced write protection prevents accidental data modification

• Integrated into automotive control systems for data logging
• Utilised in industrial automation for rapid data collection
• Ideal for medical devices requiring non-volatile storage
• Deployed in consumer electronics for enhanced performance
• Used in IoT devices for reliable memory retention

The ability to perform fast write operations at bus speed ensures that data can be captured quickly in industrial settings, reducing the risk of data loss in time-sensitive scenarios. Its robust write endurance of 100 trillion cycles further supports frequent data logging.

It operates efficiently, consuming only 300μA when active and as low as 5μA in sleep mode. This low power requirement makes it ideal for battery-operated devices or applications where energy efficiency is critical.

The sophisticated write protection mechanism includes both hardware and software controls, preventing unintended writes and ensuring that critical data remains safe from accidental changes, which is essential in mission-critical systems.

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.