onsemi FGH60T65SQD-F155, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS Stock No.:
- 178-4259
- Mfr. Part No.:
- FGH60T65SQD-F155
- Brand:
- onsemi
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|---|---|---|---|
| 30 - 30 | $6.533 | $195.99 | - |
| 60 - 90 | $6.369 | $191.07 | 2% |
| 120 + | $6.272 | $188.16 | 3% |
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- RS Stock No.:
- 178-4259
- Mfr. Part No.:
- FGH60T65SQD-F155
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 G03 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop 4th Generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 50mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 G03 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop 4th Generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 50mJ | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
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