onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

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Due to a global supply shortage, we don't know when this will be back in stock.
RS Stock No.:
178-4321
Mfr. Part No.:
FGH40T120SQDNL4
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Gate Capacitance

5000pF

COO (Country of Origin):
CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices

Applications

Solar inverter UPS Welding

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