Vishay SIA456DJ-T1-GE3 IGBT

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
180-7336
Mfr. Part No.:
SIA456DJ-T1-GE3
Brand:
Vishay
COO (Country of Origin):
CN
The Vishay SIA456DJ is a N-channel MOSFET having drain to source voltage(Vds) of 200V and gate to source voltage (VGS) 16V. It is having power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 1.38ohms at 4.5VGS and 1.5ohms at 2.5VGS. Maximum drain current 2.6A.

Trench FET power MOSFET
Thermally enhanced Power PAK SC-70 package
Small footprint area

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