Vishay SIA456DJ-T1-GE3 IGBT

Bulk discount available

Subtotal (1 pack of 10 units)*

$11.54

(exc. GST)

$13.27

(inc. GST)

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Last RS stock
  • Final 1,120 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 740$1.154$11.54
750 - 1490$1.125$11.25
1500 +$1.109$11.09

*price indicative

Packaging Options:
RS Stock No.:
180-7793
Mfr. Part No.:
SIA456DJ-T1-GE3
Brand:
Vishay
COO (Country of Origin):
CN
The Vishay SIA456DJ is a N-channel MOSFET having drain to source voltage(Vds) of 200V and gate to source voltage (VGS) 16V. It is having power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 1.38ohms at 4.5VGS and 1.5ohms at 2.5VGS. Maximum drain current 2.6A.

Trench FET power MOSFET
Thermally enhanced Power PAK SC-70 package
Small footprint area

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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