Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 reel of 1000 units)*

$2,081.00

(exc. GST)

$2,393.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 1000$2.081$2,081.00
2000 - 2000$2.022$2,022.00
3000 +$1.961$1,961.00

*price indicative

RS Stock No.:
215-6647
Mfr. Part No.:
IKB15N65EH5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

105 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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