MPN

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

RS Stock No.:: 215-6654
Mfr. Part No.:: IKB40N65ES5ATMA1
Brand:: Infineon

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 reel of 1000 units)*

$3,202.00

(exc. GST)

$3,682.00

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

4,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 - 4000	$3.202	$3,202.00
5000 +	$2.881	$2,881.00

*price indicative

RS Stock No.:: 215-6654
Mfr. Part No.:: IKB40N65ES5ATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	79 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20 V, ±30 V
	Maximum Power Dissipation	230 W
	Package Type	PG-TO263-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 79 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20 V, ±30 V
	Maximum Power Dissipation 230 W
	Package Type PG-TO263-3
	Pin Count 3

Datasheet-IKB40N65ES5ATMA1

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

FREE delivery for orders over $60.00 ex GST

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links