Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 2 units)*

$15.70

(exc. GST)

$18.06

(inc. GST)

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Per unit
Per Pack*
2 - 8$7.85$15.70
10 - 98$7.61$15.22
100 - 248$7.375$14.75
250 - 498$7.145$14.29
500 +$6.93$13.86

*price indicative

Packaging Options:
RS Stock No.:
215-6655
Mfr. Part No.:
IKB40N65ES5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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