Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 pack of 5 units)*

$28.46

(exc. GST)

$32.73

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 920 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5$5.692$28.46
10 - 95$5.588$27.94
100 - 245$5.484$27.42
250 - 495$5.386$26.93
500 +$5.284$26.42

*price indicative

Packaging Options:
RS Stock No.:
215-6648
Mfr. Part No.:
IKB15N65EH5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

105 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links