Infineon 1ED44175N01BXTSA1, N-Channel IGBT Gate Driver IC, 11.9 A 11.4 V, 6-Pin SOT-23, Surface
- RS Stock No.:
- 222-4756
- Mfr. Part No.:
- 1ED44175N01BXTSA1
- Brand:
- Infineon
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$1,407.00
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$1,617.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | $0.469 | $1,407.00 |
| 15000 + | $0.422 | $1,266.00 |
*price indicative
- RS Stock No.:
- 222-4756
- Mfr. Part No.:
- 1ED44175N01BXTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 11.9A | |
| Product Type | IGBT Gate Driver IC | |
| Maximum Collector Emitter Voltage Vceo | 11.4V | |
| Maximum Power Dissipation Pd | 500mW | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 6 | |
| Switching Speed | 50ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | 1ED44175N01B | |
| Standards/Approvals | JEDEC JESD47/22 and J-STD-020 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 11.9A | ||
Product Type IGBT Gate Driver IC | ||
Maximum Collector Emitter Voltage Vceo 11.4V | ||
Maximum Power Dissipation Pd 500mW | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 6 | ||
Switching Speed 50ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series 1ED44175N01B | ||
Standards/Approvals JEDEC JESD47/22 and J-STD-020 | ||
Automotive Standard No | ||
Infineon 1ED44175N01B Series IGBT Gate Driver IC, 11.4V Max Collector Emitter Voltage, 11.9A Max Continuous Collector Current - 1ED44175N01BXTSA1
This IGBT gate driver IC is a surface-mounted control device designed to drive IGBT transistors in electronic power stages. It provides gate-drive capability for switching applications across a wide temperature range and is intended for Compact assemblies where a small package and fast switching are required.
Features and Benefits:
• 11.9 A continuous collector current delivers substantial drive capacity
• 20 V gate-emitter protection limits gate voltage excursions
• 11.4 V collector-emitter rating suits low-voltage transistor stages
• 50 ns switching speed enables Rapid transition control
• 500 mW power dissipation supports low-power thermal budgets
• SOT-23 package allows Compact surface-mount placement
• 20 V gate-emitter protection limits gate voltage excursions
• 11.4 V collector-emitter rating suits low-voltage transistor stages
• 50 ns switching speed enables Rapid transition control
• 500 mW power dissipation supports low-power thermal budgets
• SOT-23 package allows Compact surface-mount placement
Applications
• Suitable for low-voltage motor inverter gate stages
• Used for fast switching in power conversion modules
• Ideal for Compact drive boards with limited space
• Can be used for thermally demanding assemblies up to 150 °C
• Used with power transistors requiring gate-emitter protection
• Used for fast switching in power conversion modules
• Ideal for Compact drive boards with limited space
• Can be used for thermally demanding assemblies up to 150 °C
• Used with power transistors requiring gate-emitter protection
What ambient temperature range can it operate within?
It functions from −40 °C up to 150 °C.
How many pins does the device provide for PCB routing?
The device is supplied in a 6‑pin configuration for board placement.
What mounting style is required for integration?
It is intended for surface-mount assembly in a SOT-23 footprint.
Does the part comply with recognised thermal and moisture standards?
It meets JEDEC JESD47/22 and J-STD-020 qualifications.
What channel polarity does it present for gate control?
The device employs an N-type channel configuration.