Infineon IGBT Module 1200 V

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Subtotal (1 tray of 10 units)*

$3,415.68

(exc. GST)

$3,928.03

(inc. GST)

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  • Shipping from 15 June 2026
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Units
Per unit
Per Tray*
10 - 10$341.568$3,415.68
20 - 20$334.737$3,347.37
30 +$328.043$3,280.43

*price indicative

RS Stock No.:
244-5379
Mfr. Part No.:
FP100R12KT4BOSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

515W

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Width

62 mm

Length

122mm

Height

17mm

Standards/Approvals

RoHS

Series

FP100R12KT4

Automotive Standard

No

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA

Temperature under switching conditions 150° C

Gate-emitter leakage current 100 nA

Reverse transfer capacitance 0.27 nF

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