Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

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Subtotal (1 unit)*

$439.38

(exc. GST)

$505.29

(inc. GST)

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1 - 1$439.38
2 - 2$430.60
3 - 3$421.95
4 - 4$413.53
5 +$405.27

*price indicative

Packaging Options:
RS Stock No.:
244-5380
Mfr. Part No.:
FP100R12KT4BOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

515 W

Number of Transistors

7

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

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