Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1
- RS Stock No.:
- 110-7113
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 300 - 600 | $0.263 | $78.90 |
| 900 - 1200 | $0.257 | $77.10 |
| 1500 + | $0.253 | $75.90 |
*price indicative
- RS Stock No.:
- 110-7113
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS816NWH6327XTSA1
This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in automotive and industrial electronic systems. It operates across an extended temperature range and is intended for surface-mount applications where a small footprint and modest power handling are required.
Features and Benefits:
• Low on-resistance 240 mΩ reduces conduction losses and heat
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages
Applications
• Suitable for switch stages in automotive sensor modules
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents
What package suits high-density board layouts?
It is supplied in an SC-70 surface-mount package that minimises board area and supports automated placement.
How does it perform in elevated ambient temperatures?
The device is specified for operation from -40 °C up to 175 °C, allowing use in harsh thermal environments typical of under‑bonnet automotive locations.
What drive voltage range should be applied to the gate?
The maximum permissible gate‑to‑source voltage is 8V, so gate drivers should be selected to remain within this limit.
How does the device balance switching speed and gate drive energy?
With a typical gate charge of 0.6 nC it requires relatively low energy to switch, aiding efficiency in systems with repetitive transitions.
Related links
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