DiodesZetex DMG1012UW-7 Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SC-70
- RS Stock No.:
- 122-0203
- Mfr. Part No.:
- DMG1012UW-7
- Brand:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
$243.00
(exc. GST)
$279.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 18,000 unit(s) ready to ship from another location
- Plus 54,000 unit(s) shipping from 31 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.081 | $243.00 |
| 6000 - 27000 | $0.08 | $240.00 |
| 30000 + | $0.072 | $216.00 |
*price indicative
- RS Stock No.:
- 122-0203
- Mfr. Part No.:
- DMG1012UW-7
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | DMG1012UW-7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 290mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.74nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series DMG1012UW-7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 290mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.74nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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