DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 850 mA, 100 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 122-1421
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Brand:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
$3,135.00
(exc. GST)
$3,605.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 10 September 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | $1.254 | $3,135.00 |
| 5000 - 7500 | $1.223 | $3,057.50 |
| 10000 + | $1.204 | $3,010.00 |
*price indicative
- RS Stock No.:
- 122-1421
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 850mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.36W | |
| Forward Voltage Vf | 0.95V | |
| Transistor Configuration | Full Bridge | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 850mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.36W | ||
Forward Voltage Vf 0.95V | ||
Transistor Configuration Full Bridge | ||
Maximum Operating Temperature -55°C | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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