Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin I2PAK TK16C60W,S1VQ(S2

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Package Type

I2PAK (TO-262)

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10mm

Number of Elements per Chip

1

Height

10.4mm

Forward Diode Voltage

1.7V