Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin IPAK TK8Q60W,S1VQ(S

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Subtotal 50 units (supplied in a tube)*

$55.60

(exc. GST)

$63.95

(inc. GST)

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Units
Per unit
50 - 90$1.112
100 - 240$1.041
250 - 490$0.979
500 +$0.927

*price indicative

Packaging Options:
RS Stock No.:
125-0598P
Mfr. Part No.:
TK8Q60W,S1VQ(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

80 W

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Number of Elements per Chip

1

Length

6.65mm

Width

2.3mm

Height

7.12mm

Forward Diode Voltage

1.7V

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