Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3+Tab-Pin TO-3P TK31J60W,S1VE(S

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Subtotal 10 units (supplied in a tube)*

$51.80

(exc. GST)

$59.60

(inc. GST)

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Units
Per unit
10 - 18$5.18
20 - 48$4.705
50 - 98$4.315
100 +$3.98

*price indicative

Packaging Options:
RS Stock No.:
125-0564P
Mfr. Part No.:
TK31J60W,S1VE(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3P

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3+Tab

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Maximum Operating Temperature

+150 °C

Length

15.5mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Height

20mm

Forward Diode Voltage

1.7V

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