Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3+Tab-Pin TO-3P TK31J60W,S1VE(S
- RS Stock No.:
- 125-0564P
- Mfr. Part No.:
- TK31J60W,S1VE(S
- Brand:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
$51.80
(exc. GST)
$59.60
(inc. GST)
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Units | Per unit |
|---|---|
| 10 - 18 | $5.18 |
| 20 - 48 | $4.705 |
| 50 - 98 | $4.315 |
| 100 + | $3.98 |
*price indicative
- RS Stock No.:
- 125-0564P
- Mfr. Part No.:
- TK31J60W,S1VE(S
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-3P | |
| Series | DTMOSIV | |
| Mounting Type | Through Hole | |
| Pin Count | 3+Tab | |
| Maximum Drain Source Resistance | 88 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 230 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 86 nC @ 10 V | |
| Length | 15.5mm | |
| Width | 4.5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.7V | |
| Height | 20mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-3P | ||
Series DTMOSIV | ||
Mounting Type Through Hole | ||
Pin Count 3+Tab | ||
Maximum Drain Source Resistance 88 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 230 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 86 nC @ 10 V | ||
Length 15.5mm | ||
Width 4.5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.7V | ||
Height 20mm | ||
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