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Toshiba DTMOSIV Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-252 TK11P65W,RQ(S

RS Stock No.:: 133-2796
Mfr. Part No.:: TK11P65W,RQ(S
Brand:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-252 TK11P65W,RQ(S

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RS Stock No.:: 133-2796
Mfr. Part No.:: TK11P65W,RQ(S
Brand:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11.1A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	DTMOSIV
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	440mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.7V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	100W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.6mm
	Height	2.3mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11.1A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series DTMOSIV
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 440mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.7V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 100W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.6mm
	Height 2.3mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-252 TK11P65W,RQ(S

MOSFET Transistors, Toshiba

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