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Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S

RS Stock No.:: 133-2797
Mfr. Part No.:: TK14G65W,RQ(S
Brand:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S

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Temporarily out of stock

RS Stock No.:: 133-2797
Mfr. Part No.:: TK14G65W,RQ(S
Brand:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13.7A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	DTMOSIV
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	130W
	Forward Voltage Vf	-1.7V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.35mm
	Width	8.8 mm
	Height	4.46mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13.7A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series DTMOSIV
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 130W
	Forward Voltage Vf -1.7V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.35mm
	Width 8.8 mm
	Height 4.46mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S

MOSFET Transistors, Toshiba

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