Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220FM
	Mount Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.20Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	40W
	Typical Gate Charge Qg @ Vgs	20nC
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Height	15.4mm
	Length	10.3mm
	Standards/Approvals	RoHS
	Width	4.8 mm

	Select all
	Brand ROHM
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220FM
	Mount Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.20Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 40W
	Typical Gate Charge Qg @ Vgs 20nC
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Height 15.4mm
	Length 10.3mm
	Standards/Approvals RoHS
	Width 4.8 mm

COO (Country of Origin):: JP

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX

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