ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
172-0548
Mfr. Part No.:
R6007ENX
Brand:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FM

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.20Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

40W

Maximum Operating Temperature

150°C

Width

4.8mm

Length

10.3mm

Height

15.4mm

Standards/Approvals

RoHS

COO (Country of Origin):
JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy