Microchip VN0104 N-Channel MOSFET, 350 mA, 40 V, 3-Pin TO-92 VN0104N3-G
- RS Stock No.:
- 177-9704
- Mfr. Part No.:
- VN0104N3-G
- Brand:
- Microchip
Bulk discount available
Subtotal (1 bag of 1000 units)*
$1,039.00
(exc. GST)
$1,195.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Bag* |
|---|---|---|
| 1000 - 4000 | $1.039 | $1,039.00 |
| 5000 + | $0.935 | $935.00 |
*price indicative
- RS Stock No.:
- 177-9704
- Mfr. Part No.:
- VN0104N3-G
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 350 mA | |
| Maximum Drain Source Voltage | 40 V | |
| Series | VN0104 | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 5.08mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.06mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.8V | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 350 mA | ||
Maximum Drain Source Voltage 40 V | ||
Series VN0104 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 5.08mm | ||
Number of Elements per Chip 1 | ||
Width 4.06mm | ||
Maximum Operating Temperature +150 °C | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.8V | ||
- COO (Country of Origin):
- TW
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Related links
- Microchip VN0104 Type N-Channel MOSFET 3-Pin TO-92 VN0104N3-G
- Microchip TN0106 N-Channel MOSFET 60 V, 3-Pin TO-92 TN0106N3-G
- Microchip 2N6661 Type N-Channel MOSFET 90 V Enhancement, 3-Pin TO-39 2N6661
- Microchip 2N6661 Type N-Channel MOSFET 90 V Enhancement, 3-Pin TO-39
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 240 V Depletion, 4-Pin SOT-223 BSP129H6327XTSA1
- Infineon BSP88 Type N-Channel MOSFET 240 V Enhancement, 4-Pin SOT-223 BSP88H6327XTSA1
- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 30 V Enhancement115