Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

$1,470.00

(exc. GST)

$1,680.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.49$1,470.00
6000 - 9000$0.478$1,434.00
12000 +$0.471$1,413.00

*price indicative

RS Stock No.:
178-3693
Mfr. Part No.:
SiS110DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14.2A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

24W

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.15mm

Width

3.15 mm

Height

1.07mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Tuned for the lowest RDS - Qoss FOM

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