DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN
- RS Stock No.:
- 182-6931
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
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Bulk discount available
Subtotal (1 reel of 10000 units)*
$9,510.00
(exc. GST)
$10,940.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 20,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 - 10000 | $0.951 | $9,510.00 |
| 20000 - 90000 | $0.927 | $9,270.00 |
| 100000 + | $0.835 | $8,350.00 |
*price indicative
- RS Stock No.:
- 182-6931
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 9.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.75V | |
| Maximum Power Dissipation Pd | 1.9W | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 3.05 mm | |
| Length | 3.05mm | |
| Height | 0.8mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 9.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.75V | ||
Maximum Power Dissipation Pd 1.9W | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 3.05 mm | ||
Length 3.05mm | ||
Height 0.8mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
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