Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2500 units)*

$2,997.50

(exc. GST)

$3,447.50

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 7,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 2500$1.199$2,997.50
5000 - 7500$1.169$2,922.50
10000 +$1.151$2,877.50

*price indicative

RS Stock No.:
214-4373
Mfr. Part No.:
IPD30N06S2L13ATMA4
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.65mm

Height

2.35mm

Width

6.42 mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

It is lead-free

Related links