Infineon IPD N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1
- RS Stock No.:
- 217-2535
- Mfr. Part No.:
- IPD95R450P7ATMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | $1.827 | $4,567.50 |
| 12500 + | $1.645 | $4,112.50 |
*price indicative
- RS Stock No.:
- 217-2535
- Mfr. Part No.:
- IPD95R450P7ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 950V Drain Source Voltage, 14A Continuous Drain Current - IPD95R450P7ATMA1
This MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in demanding electrical systems. It operates across a wide temperature span for industrial and automotive contexts and is supplied in a surface-mount TO-252 package for Compact board-level integration.
Features and Benefits:
• 950 V drain-source rating enabling high-voltage switching capability
• 14 A continuous drain current for sustained load handling
• 104 W power dissipation to manage thermal stress under load
• 450 mΩ RDS(on) reducing conduction losses during operation
• 35 nC typical gate charge allowing predictable switching behaviour
• 20 V maximum gate-source voltage supporting robust gate drive
• 14 A continuous drain current for sustained load handling
• 104 W power dissipation to manage thermal stress under load
• 450 mΩ RDS(on) reducing conduction losses during operation
• 35 nC typical gate charge allowing predictable switching behaviour
• 20 V maximum gate-source voltage supporting robust gate drive
Applications
• Suitable for high-voltage power conversion stages
• Ideal for automotive power subsystems meeting AEC‑Q101 needs
• Used with switch-mode power supplies handling elevated voltages
• Can be used for industrial motor-drive interfaces
• Used for DC-DC converters requiring a surface-mount form factor
• Ideal for automotive power subsystems meeting AEC‑Q101 needs
• Used with switch-mode power supplies handling elevated voltages
• Can be used for industrial motor-drive interfaces
• Used for DC-DC converters requiring a surface-mount form factor
What temperature range can it reliably operate within?
It is rated for continuous use from −55 °C to 150 °C.
How many pins does the device present for PCB routing?
The component has three electrical connections for gate, drain and source.
What mounting method is required for assembly?
It is intended for surface mounting on appropriate solder pads.
What is the forward voltage of the intrinsic body diode?
The diode forward voltage is specified as 0.9 V.
Related links
- Infineon IPD Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1
- Infineon IPD Type N-Channel MOSFET 950 V N, 3-Pin TO-252
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