MPN

Infineon HEXFET N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8

Name: Infineon HEXFET N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8
Brand: Infineon
SKU: 217-2607P
Availability: InStock

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Subtotal 1000 units (supplied on a reel)*

$1,598.00

(exc. GST)

$1,838.00

(inc. GST)

In Stock

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Units	Per unit
1000 - 1980	$1.598
2000 +	$1.573

*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	39nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	3.9mm
	Height	1.75mm
	Length	4.9mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 39nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 3.9mm
	Height 1.75mm
	Length 4.9mm
	Automotive Standard No