Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No.:: 257-9324P
Mfr. Part No.:: IRF7862TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8

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RS Stock No.:: 257-9324P
Mfr. Part No.:: IRF7862TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7862TRPBF

Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 21A Maximum Continuous Drain Current - IRF7862TRPBF

This N-channel enhancement-mode MOSFET in an SO-8 package is a surface-mount power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and complies with RoHS, making it suitable for applications that require Compact, lead-free SMD power devices.

Features and Benefits:

• 4.5mΩ Rds(on) delivers low conduction losses under load
• 30V Vds enables mid-voltage power switching capability
• 21A continuous drain current supports high-current circuits
• 30nC typical gate charge allows moderate switching speed control
• 2.5W power dissipation manages thermal loading in tight spaces

Applications

• Suitable for DC power distribution modules
• Ideal for board-level motor driver stages
• Used with voltage regulators for load switching
• Can be used for battery protection circuits
• Suitable for power management in Compact converters

What gate voltage limits must be observed?

The device must not exceed ±20V between gate and source to prevent gate dielectric stress.

How does the package affect thermal handling?

The SO-8 surface-mount package limits heat-sinking, so board copper and thermal vias are recommended to assist in dissipating the 2.5W allowable power.