Infineon IPP026N10NF2S N-Channel MOSFET, 27 A, 100 V, 3-Pin TO-220
- RS Stock No.:
- 228-6544
- Mfr. Part No.:
- IPP026N10NF2SAKMA1
- Brand:
- Infineon
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Units | Per unit | Per Tube* |
|---|---|---|
| 1000 - 1000 | $3.266 | $3,266.00 |
| 2000 - 2000 | $3.182 | $3,182.00 |
| 3000 + | $3.142 | $3,142.00 |
*price indicative
- RS Stock No.:
- 228-6544
- Mfr. Part No.:
- IPP026N10NF2SAKMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPP026N10NF2S | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 103nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPP026N10NF2S | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 103nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Length 10.36mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
Infineon IPP026N10NF2S Series MOSFET, 100V Maximum Drain Source Voltage, 27A Maximum Continuous Drain Current - IPP026N10NF2SAKMA1
This MOSFET is a high-power N-channel semiconductor designed for switching and power-control duties in demanding thermal environments. It delivers substantial continuous current handling and a high drain-source voltage rating, suitable for circuits requiring robust conduction and switching performance. Housed in a through‑hole TO-220 package, it is intended for applications where straightforward mounting and heat‑sinking are required.
Features and Benefits:
• Low on-resistance reduces conduction losses during high-current operation
• High drain-source voltage supports 100 V switching applications
• High continuous drain current enables sustained 27 A loads
• Elevated power dissipation allows 250 W thermal throughput
• Moderate gate charge permits manageable drive energy at high power
• High drain-source voltage supports 100 V switching applications
• High continuous drain current enables sustained 27 A loads
• Elevated power dissipation allows 250 W thermal throughput
• Moderate gate charge permits manageable drive energy at high power
Applications
• Suitable for high-current switching in power supplies
• Used with discrete heatsinks for industrial converters
• Ideal for motor‑driver stages requiring 27 A capability
• Can be used for 100 V DC‑DC converter switches
• Suitable for through‑hole prototyping and repair work
• Used with discrete heatsinks for industrial converters
• Ideal for motor‑driver stages requiring 27 A capability
• Can be used for 100 V DC‑DC converter switches
• Suitable for through‑hole prototyping and repair work
What gate voltage limits should be observed during use?
The device must not exceed a gate-source voltage of 20 V to avoid gate damage.
What thermal range can it withstand in operating conditions?
It can operate across a temperature span from −55 °C up to 175 °C for high-temperature environments.
How should the package be mounted for optimal cooling?
The through‑hole TO-220 format permits attachment to a PCB and direct mounting of a heatsink to the tab to maximise power dissipation.
What conduction characteristic affects switching efficiency?
The device has a very low drain-source resistance of approximately 2.6 mΩ, which reduces I^2R losses during conduction.
How does gate charge influence driver selection?
A typical total gate charge of 103 nC requires a driver capable of supplying sufficient charge rapidly to achieve desired switching speeds while managing drive losses.
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