Vishay N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3

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Subtotal (2 units, in packs of 2)*

$17.59

(exc. GST)

$20.23

(inc. GST)

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Units
Per unit
Per Pack*
2 - 48$8.795$17.59
50 - 98$8.63$17.26
100 - 248$8.485$16.97
250 - 998$8.34$16.68
1000 +$8.19$16.38

*price indicative

Packaging Options:
RS Stock No.:
239-8615
Mfr. Part No.:
SiDR220EP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

415A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00082Ω

Channel Mode

Depletion

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

46.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Width

5.15mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.

Top side cooling feature provides additional venue for thermal transfer

Low power loss

UIS tested

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