Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- RS Stock No.:
- 239-8617
- Mfr. Part No.:
- SiDR626LEP-T1-RE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$12.21
(exc. GST)
$14.042
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 5,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | $6.105 | $12.21 |
| 50 - 98 | $6.005 | $12.01 |
| 100 - 248 | $5.905 | $11.81 |
| 250 - 998 | $5.805 | $11.61 |
| 1000 + | $5.71 | $11.42 |
*price indicative
- RS Stock No.:
- 239-8617
- Mfr. Part No.:
- SiDR626LEP-T1-RE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 218A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 120W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 218A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 120W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.
Top side cooling feature provides additional venue for thermal transfer
Very low resistance
UIS tested
Related links
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC