Infineon IPL N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R1K2P7ATMA1

RS Stock No.:: 240-8548
Distrelec Article No.:: 304-24-006
Mfr. Part No.:: IPLK80R1K2P7ATMA1
Brand:: Infineon

Infineon IPL N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R1K2P7ATMA1

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Units	Per unit	Per Pack*	Saving
5 - 5	$3.626	$18.13	-
10 - 95	$3.544	$17.72	$0.82
100 - 245	$3.466	$17.33	$16.00
250 - 495	$3.388	$16.94	$59.50
500 +	$3.312	$16.56	$157.00

*price indicative

RS Stock No.:: 240-8548
Distrelec Article No.:: 304-24-006
Mfr. Part No.:: IPLK80R1K2P7ATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	800V
	Series	IPL
	Package Type	ThinPAK 5x6
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	1.2mΩ
	Forward Voltage Vf	900mV
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	3V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	43W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.42mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 800V
	Series IPL
	Package Type ThinPAK 5x6
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 1.2mΩ
	Forward Voltage Vf 900mV
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 3V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 43W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.42mm
	Automotive Standard AEC-Q101

Datasheet - IPLK80R1K2P7ATMA1

The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

Integrated Zener Diode ESD protection

Fully optimized portfolio

Low EMI

The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.