Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF

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Subtotal (1 pack of 10 units)*

$13.05

(exc. GST)

$15.01

(inc. GST)

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Per unit
Per Pack*
10 - 40$1.305$13.05
50 - 90$1.159$11.59
100 - 490$1.045$10.45
500 - 1990$0.95$9.50
2000 +$0.933$9.33

*price indicative

Packaging Options:
RS Stock No.:
262-6734
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Height

1.75mm

Width

4 mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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