Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

$3,424.00

(exc. GST)

$3,936.00

(inc. GST)

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Units
Per unit
Per Reel*
4000 +$0.856$3,424.00

*price indicative

RS Stock No.:
262-6732
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

4 mm

Standards/Approvals

RoHS

Height

1.75mm

Length

5mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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