Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

$1,972.00

(exc. GST)

$2,268.00

(inc. GST)

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Per Reel*
4000 +$0.493$1,972.00

*price indicative

RS Stock No.:
262-6735
Mfr. Part No.:
IRF7465TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Width

4 mm

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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