Infineon HEXFET Type N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8 IRF7473TRPBF

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Subtotal (1 pack of 10 units)*

$23.18

(exc. GST)

$26.66

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40$2.318$23.18
50 - 90$2.059$20.59
100 - 490$1.856$18.56
500 - 1990$1.686$16.86
2000 +$1.652$16.52

*price indicative

Packaging Options:
RS Stock No.:
262-6738
Mfr. Part No.:
IRF7473TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

61nC

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.75mm

Standards/Approvals

RoHS

Length

5mm

Width

4 mm

Automotive Standard

No

The Infineon power MOSFET has benefits such as low gate drive current due to improved gate charge characteristic, improved avalanche ruggedness and dynamic dv/dt and fully characterized avalanche voltage and current.

Ultra low on-resistance

High speed switching

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