Toshiba N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC TPC8065-H,LQ(S
- RS Stock No.:
- 756-3804
- Mfr. Part No.:
- TPC8065-H,LQ(S
- Brand:
- Toshiba
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 756-3804
- Mfr. Part No.:
- TPC8065-H,LQ(S
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Maximum Power Dissipation | 1.9 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 4.9mm | |
| Width | 3.9mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.52mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 4.9mm | ||
Width 3.9mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.52mm | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TPCxxxx, Toshiba
MOSFET Transistors, Toshiba
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