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Toshiba Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC TPC8067-H,LQ(S

RS Stock No.:: 756-3808
Mfr. Part No.:: TPC8067-H,LQ(S
Brand:: Toshiba

Toshiba Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC TPC8067-H,LQ(S

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Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 756-3808
Mfr. Part No.:: TPC8067-H,LQ(S
Brand:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	9.5nC
	Maximum Power Dissipation Pd	1.9W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	1.52mm
	Standards/Approvals	No
	Width	3.9 mm
	Length	4.9mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 9.5nC
	Maximum Power Dissipation Pd 1.9W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 1.52mm
	Standards/Approvals No
	Width 3.9 mm
	Length 4.9mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC TPC8067-H,LQ(S

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