Renesas P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK 2SJ601-AZ
- RS Stock No.:
- 772-5258P
- Mfr. Part No.:
- 2SJ601-AZ
- Brand:
- Renesas Electronics
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RS will no longer stock this product.
- RS Stock No.:
- 772-5258P
- Mfr. Part No.:
- 2SJ601-AZ
- Brand:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 46 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 65 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 7mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.5mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 46 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 7mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.5mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Height 2.3mm | ||
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