Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 25 V Enhancement, 8-Pin SOIC

RS Stock No.:: 826-8829P
Mfr. Part No.:: IRF7105TRPBF
Brand:: Infineon

Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 25 V Enhancement, 8-Pin SOIC

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RS Stock No.:: 826-8829P
Mfr. Part No.:: IRF7105TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	25V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	10nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	4mm
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 25V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 10nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 4mm
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

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