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Select all	Attribute	Value
	Brand	Infineon
	Memory Size	4MB
	Product Type	NVRAM
	Organisation	512 k x 8 Bit
	Interface Type	Parallel
	Data Bus Width	8bit
	Maximum Random Access Time	45ns
	Mount Type	Surface
	Package Type	TSOP
	Pin Count	44
	Length	18.51mm
	Height	1.04mm
	Standards/Approvals	No
	Width	10.26 mm
	Maximum Operating Temperature	85°C
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Maximum Supply Voltage	3.6V
	Number of Words	512K
	Automotive Standard	No
	Minimum Supply Voltage	2.7V
	Supply Current	70mA

	Select all
	Brand Infineon
	Memory Size 4MB
	Product Type NVRAM
	Organisation 512 k x 8 Bit
	Interface Type Parallel
	Data Bus Width 8bit
	Maximum Random Access Time 45ns
	Mount Type Surface
	Package Type TSOP
	Pin Count 44
	Length 18.51mm
	Height 1.04mm
	Standards/Approvals No
	Width 10.26 mm
	Maximum Operating Temperature 85°C
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Maximum Supply Voltage 3.6V
	Number of Words 512K
	Automotive Standard No
	Minimum Supply Voltage 2.7V
	Supply Current 70mA

Datasheet CY14B104LA-ZS25XI

The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

Infineon 4 MB 45 ns NVRAM 44-Pin TSOP

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