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onsemi 650 V 10 A Diode Schottky 2-Pin TO-220F

RS Stock No.:: 178-4444P
Mfr. Part No.:: FFSPF1065A
Brand:: onsemi

onsemi 650 V 10 A Diode Schottky 2-Pin TO-220F

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Subtotal 15 units (supplied in a tube)*

$132.66

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$152.57

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RS Stock No.:: 178-4444P
Mfr. Part No.:: FFSPF1065A
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-220F
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Peak Reverse Current Ir	600μA
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	1.75V
	Peak Non-Repetitive Forward Surge Current Ifsm	720A
	Maximum Operating Temperature	175°C
	Height	15.87mm
	Diameter	3.18mm
	Width	4.7mm
	Length	10.16mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-220F
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Peak Reverse Current Ir 600μA
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 1.75V
	Peak Non-Repetitive Forward Surge Current Ifsm 720A
	Maximum Operating Temperature 175°C
	Height 15.87mm
	Diameter 3.18mm
	Width 4.7mm
	Length 10.16mm
	Standards/Approvals No
	Automotive Standard No

Datasheet FFSPF1065A

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220FP-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220F-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding