Infineon HEXFET Type N-Channel MOSFET, 6 A, 500 V, 3-Pin TO-252 IRFR825TRPBF
- RS Stock No.:
- 218-3116
- Mfr. Part No.:
- IRFR825TRPBF
- Brand:
- Infineon
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Subtotal (1 pack of 15 units)*
$50.715
(exc. GST)
$58.32
(inc. GST)
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- Shipping from 21 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 495 | $3.381 | $50.72 |
| 510 - 990 | $3.295 | $49.43 |
| 1005 + | $3.246 | $48.69 |
*price indicative
- RS Stock No.:
- 218-3116
- Mfr. Part No.:
- IRFR825TRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Maximum Power Dissipation Pd | 119W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Maximum Power Dissipation Pd 119W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.65mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.
Lower gate charge results in simpler drive requirements.
Higher gate voltage threshold offers improved noise immunity.
Related links
- Infineon HEXFET Type N-Channel MOSFET 500 V, 3-Pin TO-252
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