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Infineon HEXFET N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252

RS Stock No.:: 830-3379P
Mfr. Part No.:: IRLR3410TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252

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RS Stock No.:: 830-3379P
Mfr. Part No.:: IRLR3410TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	155mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	79W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	-16V, +16V
	Maximum Operating Temperature	175°C
	Height	2.39mm
	Width	6.22mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 155mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 79W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs -16V, +16V
	Maximum Operating Temperature 175°C
	Height 2.39mm
	Width 6.22mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

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